7. 原子结构Neils Bohr 原子模式- ve charge+ ve chargeNo chargeQty = n1Qty = n2Qty = n3n1 = n2
for electrically stable原子核电子中子质子原子结构电子电量 = - 1.6 x 10-19 C 质子电量 = + 1.6 x 10-19 C
14. Plate Area = ADistance between plates = dFor a uniform electric field between two plates at a known external voltage, V, and separated by distance, d,
we have
E = V(plates)/d平行板电容
15. 平行板电容Capacitance
C = εA/dStored Charge
Q = CVV = Q/C = Qd/εAPlate Area = ADistance between plates = d
16. p16孤立导体电容,电压,电量的关系The electric field is zero inside and perpendicular to the surface, so V is equal everywhere
Because the potential is constant for a charged conductor, we can relate Q and V through the capacitance C
Conductor Interior
q=0, V=VodlECharge density 0Dl EVVBABA = ·-=-ò V QCCQVCVQ===
31. Human Body ModelWhen the air breaks down between the human’s finger and an IC pin, charge is suddenly transferred from the person via the grounded pin of the IC to ground.Charged PersonDeviceCharge “Flow”Ground
32. Charged Device ModelConductive SurfaceDeviceContact ResistanceCapacitance of DeviceCharge
“Flow”QGround
33. CDM MitigationLower device voltage or higher surface resistance in the discharge path can reduce discharge current.Two StrategiesCharged Device Model
76. VI表面电阻 Rs ,单位ohm
表面电阻率ρs ,单位ohm/squareρs = (voltage gradient)/(current density)
= (V/L)/(I/D) = V/I x D/L = Rs x D/L
Rs = ρs x L/D表面电阻,表面电阻率的概念3. 高电阻测试仪
77. 体积电阻,体积电阻率的概念R 厚度截面积TLWICurrentR = TL X Wohm =L X WTRohm- cm体积电阻率3.高电阻测试仪
78. 3.高电阻测试仪表面电阻测量的基本电极SampleElectrodeParallel Probe configurationρs =Potential Gradient between probesCurrent per unit probe widthV / DI / W=If D = W, thenρs = V / I ( / square )