HE20051NR
Ver10 1 Jul 182014
20V85mΩ@45V PChannel MOSFET
Features
 VDS(max)20V
 ID(max)33A
 RDS(ON) 85mΩ(max)@VGS 45V
 RDS(ON) 120mΩ(max)@VGS 25V
 Improved dvdt capability
 Green Device Available
 Fast switching
Maximum Ratings (Tc 25℃ Unless Otherwise Noted)
Parameters Symbol Limits Unit
DrainSource Voltage VDS 20 V
GateSource Voltage VGS ±10 V
Drain Current
Continuous(TC25℃)
ID
33 A
Drain Current
Continuous(TC100℃)
21 A
Drain Current Pulsed IDM1 132 A
Power Dissipation(TC25℃)
PD
156 W
Power Dissipation Derate above
25℃
0012 W℃
Storage Temperature Range TSTG 55~ 150 ℃
Operating Junction Temperature
Range
Tj 55~ 150 ℃
Thermal Characteristics
Parameter Symbol Max Typ Unit
Thermal Resistance
Junction to ambient
RθJA
80 ℃W
Applications
 Notebook
 HandHeld Instrument
 Load Switch
SOT233S Pin
Configuration
Note
1 Repetitive Rating Pulsed width
limited by maximum junction
temperature
2 The data tested by pulsed pulse
width ≦ 300us duty cycle ≦ 2
3 Essentially independent of
operating temperatureHE20051NR
Ver10 2 Jul 182014
Electrical Characteristics(Tj 25℃ Unless Otherwise Noted)
Off Characteristics
Parameter Symbol Conditions Min Typ Max Unit
Drain to Source Breakdown
Volage
BVDSS VGS0V ID250μA 20 V
BVDSS Temperature
Coefficient
△BVDSS△TJ Reference to 25℃ID
1mA
001 V
℃
DrainSource Leakage Current IDSS VDS20V VGS0V
TJ25℃
1 μA
VDS16V VGS0V
TJ125℃
10 μA
GateSource Leakage Current IGSS VDS0V VGS±10V ±100 nA
On Characteristics
Static DrainSource
OnResistance
RDS(ON)
VGS45V ID3A 70 85
mΩ
VGS25V ID2A 95 120
VGS18V ID1A 130 170
Gate Threshold Voltage VGS(th)
VDSVGS ID250μA
03 1 V
VGS(th)
Temperature Cofficient
△VGS(th) 3
mV
℃
Forward Transconductance gfs VDS10VIS1A 22 S
Dynamic And Switching Characteristics
Total Gate Charge34 Qg VDS10V
VGS 45V
ID3A
48 8
nC GateSource Charge34 Qgs 05 1
GateDrain Charge34 Qgd 19 4
Turnon Delay Time34 Td(on)
VDD10V ID1A
VGS45V RGEN25Ω
35 7
nS
Turnon Rise Time34 Tr 126 24
Turnoff Delay Time34 Td(off) 326 62
Turnoff Fall Time34 Tf 84 16
Input Capacitance Ciss
VDS10VVGS0V
F1MHz
350 510
pF Output Capacitance Coss 65 95
Reverse Transfer Capacitance Crss 50 75
DrainSource Diode Characteristics And Maximum Ratings
Parameter Symbol Test Condition Min Typ Max Unit
Continuous Source Current IS VGVD0V
Force Current
33 A
Pulsed Source Current3 ISM 132 A
Diode Forward Voltage3 VSD
VGS0V IS1A
TJ25℃
1 V HE20051NR
Ver10 3 Jul 182014 HE20051NR
Ver10 4 Jul 182014 HE20051NR
Ver10 5 Jul 182014
SOT233S PACKAGE INFORMATION

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